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Proper Citation: JEOL: JBX-3050MV Electron Beam Lithography System (RRID:SCR_020166)
Description: Electron beam lithography system for mask reticle fabrication that meets design rule of 45 to 32 nm and pattern writing with high speed, high accuracy and high reliability, achieved by high end technology
Resource Type: instrument resource
Keywords: Jeol, JEOL, Electron Beam Lithography System, Instrument Equipment, USEDit,
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